Time Resolution of an Irradiated 3D Silicon Pixel Detector

Resumen

We report on the measurements of time resolution for double-sided 3D pixel sensors with a single cell of 50 μ" role="presentation">µµ µ m ×" role="presentation">×× × 50 μ" role="presentation">µµ µ m and thickness of 285 μ" role="presentation">µµ µ m, fabricated at IMB-CNM and irradiated with reactor neutrons from 8 ×1014" role="presentation">×1014×1014 × 10 14 1MeV neq" role="presentation">??????neq n e q /cm2" role="presentation">22 2 to 1.0 ×1016" role="presentation">×1016×1016 × 10 16 1MeV neq" role="presentation">??????neq n e q /cm2" role="presentation">22 2 . The time resolution measurements were conducted using a radioactive source at a temperature of -20 and 20 °C in a bias voltage range of 50?250 V. The reference time was provided by a low gain avalanche detector produced by Hamamatsu. The results are compared to measurements conducted prior to irradiation where a temporal resolution of about 50 ps was measured. These are the first ever timing measurements on an irradiated 3D sensor and which serve as a basis for understanding their performance and to explore the possibility of performing 4D tracking in high radiation environments, such as the innermost tracking layers of future high energy physics experiments.