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Chih-Kai Hu, Chun-Jung Chen, Ta-Chin Wei, Tomi T. Li, Chih-Yung Huang, Chu-Li Chao and Yi-Jiun Lin
A numerical verification procedure and the effects of operating conditions in a large, vertical, and close-spaced reactor for metalorganic chemical vapor deposition are investigated through simulation and analysis. A set of epitaxy experiments are presen...
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Chih-Kai Hu, Chun-Jung Chen, Ta-Chin Wei, Tomi T. Li, Ching-Chiun Wang and Chih-Yung Huang
A numerical procedure was performed to simplify the complicated mechanism of an epitaxial thin-film growth process. In this study, three numerical mechanism models are presented for verifying the growth rate of the gallium nitride (GaN) mechanism. The me...
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Wei-Kai Wang, Shih-Yung Huang, Ming-Chien Jiang and Dong-Sing Wuu
Approximately 4-µm-thick GaN epitaxial films were directly grown onto a GaN/sapphire template, sapphire, Si(111), and Si(100) substrates by high-temperature pulsed laser deposition (PLD). The influence of the substrate type on the crystalline quality, su...
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