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Inicio  /  Applied Sciences  /  Vol: 8 Núm: 5 Par: May (2018)  /  Artículo
ARTÍCULO
TITULO

Effect of Carrier Localization on Recombination Processes and Efficiency of InGaN-Based LEDs Operating in the ?Green Gap?

Sergey Yu. Karpov    

Resumen

A semi-empirical model of carrier recombination accounting for hole localization by composition fluctuations in InGaN alloys is extended to polar and nonpolar quantum-well structures. The model provides quantitative agreement with available data on wavelength-dependent radiative and Auger recombination coefficients in polar LEDs. Comparison of calculated internal quantum efficiencies of polar and nonpolar LEDs enables an assessment of the roles of carrier localization, quantum-confined Stark effect, and native material properties for the efficiency decline in the “green gap”.

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