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Vallery Stanishev, Nerijus Armakavicius, Chamseddine Bouhafs, Camilla Coletti, Philipp Kühne, Ivan G. Ivanov, Alexei A. Zakharov, Rositsa Yakimova and Vanya Darakchieva
In this work we have critically reviewed the processes in high-temperature sublimation growth of graphene in Ar atmosphere using closed graphite crucible. Special focus is put on buffer layer formation and free charge carrier properties of monolayer grap...
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Priya Darshni Kaushik, Gholam Reza Yazdi, Garimella Bhaskara Venkata Subba Lakshmi, Grzegorz Greczynski, Rositsa Yakimova and Mikael Syväjärvi
Modification of epitaxial graphene on silicon carbide (EG/SiC) was explored by ion implantation using 10 keV nitrogen ions. Fragments of monolayer graphene along with nanostructures were observed following nitrogen ion implantation. At the initial fluenc...
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