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Yuwei Cai, Qingzhu Zhang, Zhaohao Zhang, Gaobo Xu, Zhenhua Wu, Jie Gu, Junjie Li, Jinjuan Xiang and Huaxiang Yin
HfO2-based ferroelectric materials have been widely studied for their application in ferroelectric FETs, which are compatible with conventional CMOS processes; however, problems with the material?s inherent fatigue properties have limited its potential f...
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