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Kenneth F. Galloway, Arthur F. Witulski, Ronald D. Schrimpf, Andrew L. Sternberg, Dennis R. Ball, Arto Javanainen, Robert A. Reed, Brian D. Sierawski and Jean-Marie Lauenstein
Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than...
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