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Kouamé Boko Joël-Igor N?Djoré, Moussa Grafouté, Younes Makoudi, Waël Hourani and Christophe Rousselot
Tungsten oxide films are deposited onto glass and silicon substrates using reactive magnetron sputtering. Several studies have revealed difficulties in studying the electrical properties of resistive WOx films. The main objective of this work is to propo...
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Atabek E. Atamuratov, Mahkam M. Khalilloev, Ahmed Yusupov, A. J. García-Loureiro, Jean Chamberlain Chedjou and Kyamakya Kyandoghere
In this paper, different physical models of single trap defects are considered, which are localized in the oxide layer or at the oxide?semiconductor interface of field effect transistors. The influence of these defects with different sizes and shapes on ...
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He Guan and Shaoxi Wang
Au-Pt-Ti/high-k/n-InAlAs metal-oxide-semiconductor (MOS) capacitors with HfO2-Al2O3 laminated dielectric were fabricated. We found that a Schottky emission leakage mechanism dominates the low bias conditions and Fowler?Nordheim tunneling became the main ...
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