4   Artículos

 
en línea
Xiaoming Huang, Dong Zhou and Weizong Xu    
The electrical characteristics of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) deposited with different N2/O2 partial pressure ratios (PN/O) are investigated. It is found that the device with 20% PN/O exhibits enhanced electrical stability aft... ver más
Revista: Applied Sciences    Formato: Electrónico

 
en línea
Caigui Yang, Zhiqiang Fang, Honglong Ning, Ruiqiang Tao, Jianqiu Chen, Yicong Zhou, Zeke Zheng, Rihui Yao, Lei Wang, Junbiao Peng and Yongsheng Song    
Recently, amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs) with inkjet printing silver source/drain electrodes have attracted great attention, especially for large area and flexible electronics applications. The silver ink could be... ver más
Revista: Applied Sciences    Formato: Electrónico

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