25   Artículos

 
en línea
Lei Sun, Chong Li, Zhijun Xu, Lianhai Tai, Yue Cao and Xiaowu Zhang    
Insufficient stability of the top plate at the corner of an easily combustible coal seam comprehensive mining face may lead to a natural fire within the goaf. While corner sealing is crucial for minimizing air leakage, current sealing methods struggle to... ver más
Revista: Applied Sciences    Formato: Electrónico

 
en línea
Chien-Hsuan Chang and Yi-Fan Chen    
To improve the efficiency of photovoltaic (PV) grid-tied systems and simplify the circuit structure, many pseudo DC-link inverters have been proposed by combining a sinusoidal pulse-width modulation (SPWM) controlled buck-boost converter and a low-freque... ver más
Revista: Applied Sciences    Formato: Electrónico

 
en línea
Mauro Menichelli, Marco Bizzarri, Maurizio Boscardin, Mirco Caprai, Anna Paola Caricato, Giuseppe Antonio Pablo Cirrone, Michele Crivellari, Ilaria Cupparo, Giacomo Cuttone, Silvain Dunand, Livio Fanò, Omar Hammad Alì, Maria Ionica, Keida Kanxheri, Matthew Large, Giuseppe Maruccio, Anna Grazia Monteduro, Francesco Moscatelli, Arianna Morozzi, Andrea Papi, Daniele Passeri, Marco Petasecca, Silvia Rizzato, Alessandro Rossi, Andrea Scorzoni, Leonello Servoli, Cinzia Talamonti, Giovanni Verzellesi and Nicolas WyrschaddShow full author listremoveHide full author list    
Hydrogenated amorphous silicon (a-Si:H) can be produced by plasma-enhanced chemical vapor deposition (PECVD) of SiH4 (silane) mixed with hydrogen. The resulting material shows outstanding radiation hardness properties and can be deposited on a wide varie... ver más
Revista: Instruments    Formato: Electrónico

 
en línea
Joseph Rabinowicz and Shlomo Greenberg    
This research presents a novel approach for physical design implementation aimed for a System on Chip (SoC) based on Selective State Retention techniques. Leakage current has become a dominant factor in Very Large Scale Integration (VLSI) design. Power G... ver más
Revista: Journal of Low Power Electronics and Applications    Formato: Electrónico

 
en línea
Da Yu, Keren Dai, Jinming Zhang, Benqiang Yang, He Zhang and Shaojie Ma    
In recent years, penetrating weapons have been used more and more to attack increasingly hard targets; therefore, the impact of such a penetrating process has increased to an extremely high level. As an important component of a fuze, the reliability of t... ver más
Revista: Applied Sciences    Formato: Electrónico

 
en línea
Wenjie Liu, Yongheng Yang, Tamas Kerekes, Elizaveta Liivik, Dmitri Vinnikov and Frede Blaabjerg    
In transformerless grid-connected photovoltaic (PV) systems, leakage currents should be properly addressed. The voltage fluctuations between the neutral point of the grid and the PV array, i.e., common-mode voltage (CMV), will affect the value of the lea... ver más
Revista: Applied Sciences    Formato: Electrónico

 
en línea
Dohyun Kim, Keun Man Song, UiJin Jung, Subin Kim, Dong Su Shin and Jinsub Park    
In this study, we investigated the effects of InGaN/GaN-based interlayer (IL) and electron emitting layer (EEL) consisting of a GaN barrier layer grown with different metal-organic (MO) precursors of gallium (Ga), which were grown underneath the active l... ver más
Revista: Applied Sciences    Formato: Electrónico

 
en línea
M. Bakowski, J. Lang, J-K. Lim, J. Hellén, T.M.J. Nilsson, B. Schodt, R. Poder, I. Belov, P. Leisner     Pág. 157 - 165
The RF power amplifier demonstrators containing each one GaN-on-SiC, HEMT, CHZ015A-QEG, from UMS in SMD quad-flat no-leads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) and evaluated electrically, thermally and structurally. T... ver más
Revista: Advances in Technology Innovation    Formato: Electrónico

 
en línea
Hsiao-Hsuan Hsu, Hsiu-Ming Liu and Sheng Lee    
In this study, we reveal that the thermal budget of post-metal annealing not only determines the formation of the ferroelectric phase and dipole domain but also the film quality of the gate stack in a metal-ferroelectric-metal capacitor. The higher leaka... ver más
Revista: Coatings    Formato: Electrónico

 
en línea
He Guan and Shaoxi Wang    
Au-Pt-Ti/high-k/n-InAlAs metal-oxide-semiconductor (MOS) capacitors with HfO2-Al2O3 laminated dielectric were fabricated. We found that a Schottky emission leakage mechanism dominates the low bias conditions and Fowler?Nordheim tunneling became the main ... ver más
Revista: Coatings    Formato: Electrónico

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