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Samra Saleem, Ammara Maryam, Kaneez Fatima, Hadia Noor, Fatima Javed and Muhammad Asghar
To realize practical applications of nanowire-based devices, it is critical, yet challenging, to control crystal structure growth of III-V semiconductor nanowires. Here, we demonstrate that controlled wurtzite and zincblende phases of InAs nanowires can ...
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María Elena Sánchez Vergara, María José Canseco Juárez, Ricardo Ballinas Indili, Genaro Carmona Reyes, José Ramón Álvarez Bada and Cecilio Álvarez Toledano
In the last few years, significant advances have been achieved in the development of organic semiconductors for use in optoelectronic devices. This work reports the doping and deposition of semiconducting organic thin films based on manganese (III) phtha...
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Enrico Giulotto and Mario Geddo
Micro-Raman mapping can provide detailed information about the strain distribution in GaAsN/GaASN:H planar heterostructures.
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Loizos Efthymiou, Gianluca Camuso, Giorgia Longobardi, Terry Chien, Max Chen and Florin Udrea
With Gallium Nitride (GaN) device technology for power electronics applications being ramped up for volume production, an increasing amount of research is now focused on the performance of GaN power devices in circuits. In this study, an enhancement mode...
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