|
|
|
|
|
Hsin-Hui Hu, Yan-Wei Zeng and Kun-Ming Chen
Polycrystalline silicon (poly-Si) thin film transistors (TFT) with a tri-gate fin-like structure and wide drain were designed and simulated to improve gate-induced drain leakage (GIDL), ON-state current, and breakdown voltage. The GIDL of fin-like TFTs (...
ver más
|
|
|
|
|