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Mounia Chakik, Siziwe Bebe and Ravi Prakash
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Mingyu Zhang, Kuankuan Lu, Zhuohui Xu, Honglong Ning, Xiaochen Zhang, Junlong Chen, Zhao Yang, Xuan Zeng, Rihui Yao and Junbiao Peng
The indium-free amorphous oxide semiconductor thin film transistor (AOS-TFT) with aluminum (Al) electrodes shows broad application prospects in new-generation display technologies, such as ultra-high definition large-screen display, OLED display and 3D d...
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Hsiao-Hsuan Hsu, Hsiu-Ming Liu and Sheng Lee
In this study, we reveal that the thermal budget of post-metal annealing not only determines the formation of the ferroelectric phase and dipole domain but also the film quality of the gate stack in a metal-ferroelectric-metal capacitor. The higher leaka...
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Hsin-Hui Hu, Yan-Wei Zeng and Kun-Ming Chen
Polycrystalline silicon (poly-Si) thin film transistors (TFT) with a tri-gate fin-like structure and wide drain were designed and simulated to improve gate-induced drain leakage (GIDL), ON-state current, and breakdown voltage. The GIDL of fin-like TFTs (...
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Caigui Yang, Zhiqiang Fang, Honglong Ning, Ruiqiang Tao, Jianqiu Chen, Yicong Zhou, Zeke Zheng, Rihui Yao, Lei Wang, Junbiao Peng and Yongsheng Song
Recently, amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs) with inkjet printing silver source/drain electrodes have attracted great attention, especially for large area and flexible electronics applications. The silver ink could be...
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