|
|
|
|
|
Krzysztof Achtenberg, Graziella Scandurra, Janusz Mikolajczyk, Carmine Ciofi and Zbigniew Bielecki
This paper presents the design and testing of an ultra-low-noise transimpedance amplifier (TIA) for low-frequency noise measurements on low-impedance (below 1 kO) devices, such as advanced IR photodetectors. When dealing with low-impedance devices, the m...
ver más
|
|
|
|
|
|
|
|
|
|
|
Pablo Fernández-Martínez, David Flores, Salvador Hidalgo, Xavier Jordà, Xavier Perpiñà, David Quirion, Lucia Ré, Miguel Ullán and Miquel Vellvehí
An increasing demand for power electronic devices able to be operative in harsh radiation environments is now taking place. Specifically, in High Energy Physics experiments the required power devices are expected to withstand very high radiation levels w...
ver más
|
|
|
|
|
|
|
|
|
|
|
Frederick Ojiemhende Ehiagwina,Olufemi Oluseye Kehinde,Lateef Olashile Afolabi,Hassan Jimoh Onawola,Nurudeen Ajibola Iromini
Pág. 133 - 141
Properties of Silicon Carbide Junction Field Effect Transistor (SiC JFET) such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for many ye...
ver más
|
|
|
|
|
|