|
|
|
|
|
Ali Khalfallah and Zohra Benzarti
This paper investigates the mechanical properties and creep behavior of undoped and Mg-doped GaN thin films grown on sapphire substrates using metal?organic chemical vapor deposition (MOCVD) with trimethylgallium (TMG) and bis(cyclopentadienyl)magnesium ...
ver más
|
|
|
|
|
|
|
|
|
|
|
Andrew J. Clayton, Ali Abbas, Peter J. Siderfin, Stephen Jones, Ana Teloeken, Ochai Oklobia, John M. Walls and Stuart J. C. Irvine
CdTe solar cells were produced using metal organic chemical vapour deposition (MOCVD), which employed a (Zn,Al)S (AZS) high resistant transparent (HRT) layer at the transparent conducting oxide (TCO)/Cd(Zn)S emitter interface, to enable the higher anneal...
ver más
|
|
|
|
|
|
|
|
|
|
|
Waldemar Gawron, Jan Sobieski, Tetiana Manyk, Malgorzata Kopytko, Pawel Madejczyk and Jaroslaw Rutkowski
This paper presents the current status of medium-wave infrared (MWIR) detectors at the Military University of Technology?s Institute of Applied Physics and VIGO System S.A. The metal?organic chemical vapor deposition (MOCVD) technique is a very convenien...
ver más
|
|
|
|
|
|
|
|
|
|
|
Teng Jiao, Zeming Li, Wei Chen, Xin Dong, Zhengda Li, Zhaoti Diao, Yuantao Zhang and Baolin Zhang
To obtain high-quality n-type doped ß-Ga2O3 films, silane was used as an n-type dopant to grow Si-doped ß-Ga2O3 films on (100) ß-Ga2O3 substrates by metal-organic chemical vapor deposition (MOCVD). The electron concentrations of the Si-doped ß-Ga2O3 film...
ver más
|
|
|
|
|
|
|
|
|
|
|
Dohyun Kim, Keun Man Song, UiJin Jung, Subin Kim, Dong Su Shin and Jinsub Park
In this study, we investigated the effects of InGaN/GaN-based interlayer (IL) and electron emitting layer (EEL) consisting of a GaN barrier layer grown with different metal-organic (MO) precursors of gallium (Ga), which were grown underneath the active l...
ver más
|
|
|
|
|
|
|
|
|
|
|
Yudan Gou, Jun Wang, Yang Cheng, Yintao Guo, Xiao Xiao and Shouhuan Zhou
VCSEL (vertical cavity surface emitting laser) is a promising optoelectronic device, but its high manufacturing cost limits its scope of applications. Growing on larger size wafers is an effective way to reduce the cost. However, the growth rate uniformi...
ver más
|
|
|
|
|
|
|
|
|
|
|
Chih-Kai Hu, Chun-Jung Chen, Ta-Chin Wei, Tomi T. Li, Chih-Yung Huang, Chu-Li Chao and Yi-Jiun Lin
A numerical verification procedure and the effects of operating conditions in a large, vertical, and close-spaced reactor for metalorganic chemical vapor deposition are investigated through simulation and analysis. A set of epitaxy experiments are presen...
ver más
|
|
|
|
|
|
|
|
|
|
|
Chih-Kai Hu, Chun-Jung Chen, Ta-Chin Wei, Tomi T. Li, Ching-Chiun Wang and Chih-Yung Huang
A numerical procedure was performed to simplify the complicated mechanism of an epitaxial thin-film growth process. In this study, three numerical mechanism models are presented for verifying the growth rate of the gallium nitride (GaN) mechanism. The me...
ver más
|
|
|
|
|
|
|
|
|
|
|
Tuung Luoh, Yu-Kai Huang, Yung-Tai Hung, Ling-Wuu Yang, Ta-Hone Yang and Kuang-Chao Chen
Titanium nitride (TiN) not only was utilized in the wear-resistant coatings industry but it was also adopted in barrier processes for semiconductor manufacturing. Barrier processes include the titanium (Ti) and TiN processes, which are commonly used as d...
ver más
|
|
|
|
|
|