Resumen
In this work, a study on large-diameter GaAs ingot growth is presented. Optimized temperature control technology is developed. Horizontal and vertical temperature application technologies with optimum conditions are investigated. The design result is verified through thermal analysis. In addition, polishing process technology for large-diameter GaAs substrates is developed. Simulation data were used to carry out experiments to determine the optimum temperature conditions. As a result of the defect analysis, the final manufacturing result is found to have excellent thickness variations. This presents the validity of the manufacturing process developed in this work.