Analysis of Work-Function Variation Effects in a Tunnel Field-Effect Transistor Depending on the Device Structure

Garam Kim

Jang Hyun Kim

Jaemin Kim and Sangwan Kim

Resumen

This work can be applied to analyze and reduce the WFV effect of TFETs.

Palabras claves

Acceso

P�GINAS

pp. 0 - 0

N�MERO

Volumen: 10 Parte: 15 (2020)

MATERIAS

REVISTAS SIMILARES

Instruments

DOI

https://doi.org/10.3390/app10155378

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