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Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)
Abstract
Properties of Silicon Carbide Junction Field Effect Transistor (SiC JFET) such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for many years developed devices based on Silicon (Si). A number of power system Engineers have made efforts to develop more robust equipment including circuits or modules with higher power density. However, it was realized that several available power semiconductor devices were approaching theoretical limits offered by Si material with respect to capability to block high voltage, provide low on-state voltage drop and switch at high frequencies. This paper presents an overview of the current applications of SiC JFET in circuits such as inverters, rectifiers and amplifiers. Other areas of application reviewed include; usage of the SiC JFET in pulse signal circuits and boost converters. Efforts directed toward mitigating the observed increase in electromagnetic interference were also discussed. It also presented some areas for further research, such as having more applications of SiC JFET in harsh, high temperature environment. More work is needed with regards to SiC JFET drivers so as to ensure stable and reliable operation, and reduction in the prices of SiC JFETs through mass production by industries.
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R. Jacek, P. Dimosthenis and N. Hans-Peter, "Silicon carbide power transistors: a new era in power electronics is initiated," IEEE Industrial Electronics Magazine ·, vol. 6, no. 2, pp. 17-26, 15 June 2012.
E. Platania, Z. Chen, F. Chimento, A. E. Grekov, R. Fu, L. Lu, A. Raciti, J. L. Hudgins, H. A. Mantooth, D. C. Sheridan, J. Casady and E. Santi, "A physics-based model for a SiC JFET accounting for electric-field-dependent mobility," IEEE Transactions on Industry Applications, vol. 47, no. 1, pp. 199-211, 2011.
V. Veliadis, "Silicon carbide junction field-effect transistors (SiC JFET)," Wiley Encyclopedia of Electrical and Electronics Engineering, pp. 1-37, 2014.
F. Roccaforte, F. Giannazzo, F. Iucolano, J. Eriksson, M. Weng and V. Raneri, "Surface and interface issues in wideband gap semiconductor electronics," Applied Surface Science, vol. 256, no. 19, pp. 5727-5735, 2010.
H. Choi, "Overview of Silicon Carbide power devices," Fairchild Semiconductor.
J.-K. Lim, G. Tolstoy, D. Peftitsis, J. Rabkowski, M. Bakowski and H.-P. Nee, "Comparison of total losses of 1.2 kV SiC JFET and BJT in dc-dc converter including gate driver," Materials Science Forum, Vols. 679-680, pp. 649-652, March 2011.
B. Wrzecionko, D. Bortis and J. W. Kolar, "A 1200C ambient temperature forced air-cooled normally-off SiC JFET automotive inverter system," IEEE Transactions on Power Electronics, vol. 29, no. 5, pp. 2345-2358, May, 2014.
X. Zheng and P. Sanbo, "Design and analyse of silicon carbide JFET based inverter," WSEAS Transactions on Circuits and Systems, vol. 11, no. 9, pp. 295-304, 2012.
R. R. Devarapally, "Survey of applications of WBG devices in power electronics," Kansas, 2016.
M. Lades, "Modeling and simulation of wide bandgap semiconductor devices: 4H/6H-SiC," 2000.
O. A. Akpaida, O. Omoroguiwa and M. S. Okundamiya, Principles of electronic devices and circuits, 1st ed., Solozone, Ed., Benin-City, Edo-State: Stemic Publication, 2005.
P. G. Neudeck, S. L. Garverick, D. J. Spry, L.-Y. Chen, G. M. Beheim, M. J. Krasowski and M. Mehrehany, "Extreme temperature 6H-SiC JFET integrated circuit technology," Physica status solidi, 2009.
R. Ouaida, X. Fonteneau, F. Dubois, D. Bergogne, F. Morel, H. Morel and S. Oge, "SiC Vertical JFET pure diode-less inverter leg," in Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eigth Annual IEEE, Long Beach, CA, 2013.
S. Bellone, L. Di Benedetto and G. Licciardo, "A model of the off-behaviour of 4H-SiC power JFET," Solid State Electronics, vol. 109, pp. 17-24, 2015.
M. Quddus, M. Mudholkar and A. Salih, "Carrier separation technique to optimize conductivity modulation in high voltage rectifiers," in Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on, 2015.
A. Vazquez, A. Rodriguez, M. Fernandez, M. M. Hernando, E. Maset and J. Sebastian, "On the use of front-end cascode rectifier based on a normally-on SiC JFET and Si MOSFET," IEEE Transaction on Power Electronics, vol. 29, no. 5, pp. 2418-2427, May 2014.
R. Shillington, P. Gaynor, M. Harrison and W. Heffernan, "Silicon carbide JFET reverse conduction characteristics and use in power converters," IET Power Electronics, vol. 5, no. 8, pp. 1282-1290, 2012.
Y. Kusuda, "5.1A 60V auto-zero and chopper operational amplifier with 800kHz interleaved clocks and input bias-current trimming," in Solid- State Circuits Conference - (ISSCC), 2015 IEEE International, San Francisco, CA, 2015.
H. Zhou, W. Wang, C. Chen and Y. Zheng, "A low-noise, large-dynamic-range-enhanced amplifier based on jfet buffering input and JFET bootstrap structure," Sensors Journal, IEEE, vol. 15, no. 4, pp. 2101-2105, April 2015.
R. Putera, Kusnandar, A. Najmurrokhman, Sunubroto, Chairunnisa and A. Munir, "High gain RF amplifier for very low frequency receiver application," in Information Technology and Electrical Engineering (ICITEE), 2014 6th International Conference on, 2014.
H. T. Keiichi Ise, K. Takaki, M. Wake, K. Okamura, K. Takayama and W. Jiang, "Development of a megahertz high-voltage switching pulse modulator using a SiC-JFET for an induction synchrotron," IEEE Transactions on Plasma Science, vol. 39, no. 2, pp. 730-736, 7 February 2011.
W. Konrad, K. Leong, K. Krischan and A. Muetze, "A simple SiC JFET based AC variable current limiter," in Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on, 2014.
B. Pushpakaran, M. Hinojosa, S. Bayne, V. Veliadis, D. Urciuoli, N. El-Hinnawy, P. Borodulin, S. Gupta and C. Scozzie, "Evaluation of SiC JFET performance during repetitive pulsed switching into an unclamped inductive load," Plasma Science, Transaction on, vol. 44, no. 10, pp. 2968-2973, October 2014.
J. Bacmaga, K. Bene, B. Pejcinovic and A. Baric, "Evaluation of the operation of depletion-mode SiC power JFET in DC-DC converter applications," in Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2014 37th International Convention on, Opatija, 2014.
A. Anthon, Z. Zhang and M. Andersen, "A high power boost converter for PV Systems operating up to 300 kHz using SiC devices," in Electronics and Application Conference and Exposition (PEAC), 2014 International, Shanghai, 2014.
J. Hostetler, P. Alexandrov, X. Li, L. Fursin and A. Bhalla, "6.5 kV SiC normally-off JFETs - technology status," in Wide Bandgap Power Devices and Applications (WiPDA), 2014 IEEE Workshop on, Knoxville, TN, 2014.
F. Chevaliera, G. Grossetb, D. L., D. Tourniera, D. Plansona and P. Brosselarda, "A path toward high voltage devices : 3.3 kV 4H-SiC JBS and JFET," in HETECH 2012, Barcelone, 2012.
X. Song, A. G. Huang, C. Peng and L. Zhang, "Improved 6.5kV FREEMD-Pair based on SiC JFET and Si IGBT," in IEEE Applied Power Electronics Conference and Exposition (APEC), Long Beach, CA, 2016.
J. Biela, D. Aggeler, D. Bortis and J. W. Kolar, "Balancing circuit for a 5-kV/50-ns pulsed-power switch based on SiC-JFET super cascode," IEEE Transactions on Plasma Science, vol. 40, no. 10, pp. 2554-2560, 2012.
A. Daniel, C. Francisco, B. Juergen and W. K. Johann, "Dv/Dt-Control methods for the SiC JFET/Si MOSFET cascode," IEEE Transactions on Power Electronics, vol. 28, no. 8, pp. 4074-4082, August 2013.
N. Oswald, P. Anthony, N. McNeill and B. Stark, "An experimental investigation of the tradeoff between switching losses and EMI generation with hard-switched All-Si, Si-SiC, and All-SiC device combinations," Power Electronics, IEEE Transactions on, vol. 29, no. 5, pp. 2393-2407, 1 May 2014.
D. Domes, C. Messelke and P. Kanschat, "1st Industrialized 1200V SiC JFET module for high energy efficiency application," Infineon Technologies AG., 2011.
R. Chacko, M. Ravichandran, M. Sanoop, T. Sabu, V. Sadasivan Achari and C. Joseph, "Magnetic slip ring — Rotary transformer based novel non-contact signal transfer mechanism for spacecraft application," in Emerging Research Areas: Magnetics, Machines and Drives (AICERA/iCMMD), 2014 Annual International Conference on, 2014.
R. Robutel, C. Martin, C. Buttay, H. Morel, P. Mattavelli, D. Boroyevich and R. Meuret, "Design and implementation of integrated common mode capacitors for SiC-JFET inverters," Power Electronics, IEEE Transaction on, vol. 29, no. 7, pp. 3525-3636, 2014.
K. Li, A. Videt and N. Idir, "Characteriszation method of SiC-JFET interelectrode capacitances in linear region," IEEE Transaction on Power Electronics, vol. 31, no. 2, pp. 1528-1540, February 2016.
S. Zeljkovic, R. Vuletic, A. Miller and A. Denais, "A three phase bidirectional V2G interface converter based on SiC JFETs," in Power Electronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on, Geneva, 2015.
S. Chen, J. He and K. Sheng, "High-voltage full-SiC power module: Device fabrication, testing and high frequency application in kW-level converter," in Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on, 2015.
A. Romani, A. Camarda, A. Baldazzi and M. Tartagni, "A micropower energy harvesting circuit with piezoelectric transformer-based ultra-low voltage start-up," in Low Power Electronics and Design (ISLPED), 2015 IEEE/ACM International Symposium on, Rome, 2015.
R. Jacek, P. Dimosthenis and N. Hans-Peter, "Design steps towards a 40-kVA SiC JFET inverter with natural-convection cooling and an efficiency exceeding 99.5%," IEEE Transaction on Industry Applications, vol. 49, no. 4, pp. 1589-1598, July-August 2013.
T. Friedli, S. D. Round, D. Hassler and J. W. Kolar, "Design and Performance of a 200-kHz All-SiC JFET Current DC-Link Back-to-Back Converter," IEEE Transactions on Industry Applications, vol. 45, no. 5, pp. 1868-1878, September/October 2009.
D. Peftitsis, G. Tolstoy, A. Antonopoulos, J. Rabkowski, J.-K. Lim, M. Bakowski, L. Angquist and H.-P. Nee, "High power modular multilevel converter with SiC JFETs," IEEE Transaction on Power Electronics, vol. 27, no. 1, pp. 28-36, 2012.
F. Xu, T. J. Han, D. Jiang, L. M. Tolbert, F. F. Wang, J. Nagashima, S. J. Kim, S. Kulkarni and F. Barlow, "Development of a SiC JFET-based six-pack power module for a fully integrated inverter," IEEE Transaction on Power Electronics, vol. 28, no. 3, pp. 1464-1478, 2013.
C. Buttay, D. Planson, B. Allard, D. Bergogne, P. Bevilaqua, C. Jouber, M. Lazar and C. Martin, "State of the art of high temperature power electronics," Materials Science and Engineering: B, vol. 176, no. 4, pp. 283-288, 2011.
W.-C. Lien, N. Damrongplasit, J. Paredes, D. Senesky, T.-J. Liu and A. Pisano, "4H-SiC N-Channel JFET for operation in high-temperature Environments," Electron Devices Society, IEEE Journal of the, vol. 2, no. 6, pp. 164 - 167, November 2014.
D. J. Spry, P. G. Neudeck, L. Chen, D. Lukco, C. W. Chang and G. M. Beheim, "Prolong 5000C demonstration of 4H-SiC JFET ICs with two-level interconnect," IEEE Electron Device Letter, pp. 625-628, 2016.
P. G. Neudeck, D. J. Spry and L.-Y. Chen, "First-order SPICE modeling of extreme-temperature 4H-SiC JFET integrated circuit," 2016.
G. Tolstoy, A. K. Dutta and M. S. Islam, "Experimental duarbility testing of 4H SiC JFET integrated circuit technology at 7270C," in Proc. SPIE 9836 Micro-and Nanotechnology Sensors, Systems, and Applications VIII, Maltimore, Maryland, 2016.
A. Rahman, A. M. Francis, S. Ahmed, S. K. Akula, J. Holmes and A. Mantooth, "High-temperature voltage and current references in Silicon Carbide CMOS," IEEE Transactions on Electron Devices, vol. 63, no. 6, pp. 2455-2461, 2016.
D.-P. Sadik, J. Colmenares, D. Peftitsis, G. Tolstoy, J. Rabkowski and H.-P. Nee, "Analysis of short-circuit conditions for silicon carbide power transistors and suggestions for protection," in Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on, Lappeenranta, 2014.
G. Kampitsis, S. Papathanassiou and S. Manias, "Comparative evaluation of the short-circuit withstand capability of 1.2 kV Silicon Carbide (SiC) power transistors in real life applications," Microelectronics Reliability, vol. 55, no. 12, pp. 2640-2646, 2015.
X. Li, H. Zhang, P. Alexandrov and A. Bhalla, "Medium voltage power switch based on SiC JFET," in IEEE Applied Power Electronicss Conference and Exposition (APEC), Long Beach, CA, 2016.
K. Y. J. Hsu and T.-W. Chuang, "An input buffer with monolithic JFET in standard BCD technology for sensor applications," in Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on, Singapore, 2015.
Z. Miao, G. Sabui, A. Chen, Y. Li, Z. Shen, J. Wang, Z. Shuai, A. Luo, X. Yin and M. Jiang, "A self-powered ultra-fast dc solid state circuit breaker using a normally-on SiC JFET," in Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE, Charlotte, NC, 2015.
Z. J. Shen, G. Sabiu, M. Zhenyu and S. Zhikang, "Wide-bandgap solid-state circuit breakers for dc power systems: device and circuit considerations," Electron Devices, IEEE Transaction on, vol. 62, no. 2, pp. 294-300, February 2015.
V. Veliadis, B. Steinerb, K. Lawson, S. B. Bayne, D. Urciuo, H. Li and C. Ha , "Suitability of N-ON recessed implanted gate vertical-channel SiC JFETs for optically tyriggerred 1200 V solid-sate-circuit breaker," IEEE Journal of Emerging and Slected Topics in Power Electronics, vol. PP, no. 99, pp. 1-1, 2016.
M. Kemptkes, I. Roth and M. Gaudreau, "Solid-state circuit breaker for medium voltage dc power," in Proceedings IEEE Electric Ship Technologies Symposium, Alexandria, VA, 2011.
C. Meyer, S. Schroder and R. W. De Doncker, "Solid-state circuit breakers and current limiters for medium-voltage systems having distributed power systems," IEEE Transactions on Poer Electronics, vol. 19, no. 5, pp. 1333-1340, September 2004.
D. P. Sadik et al, "Short-circuit protection circuits for Silicon Carbide power transistors," IEEE transaction on Industrial Electronics, vol. 63, no. 4, pp. 1995-2004, April 2016.
Z. Miao, G. Sabui, A. Maradkhani Roshandeh and Z. J. Shen, "Design and analysis of DC solid state circuit breakers using SiC JFET," IEEE Journal of Emerging and Selected Topics in Power Electronics, pp. 1-1, 2016.
X. Li, A. Bhalla, P. Alexandrov and L. Fursin, "Study of SiC vertical JFET behavior during unclamped inductive switching," in Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE, Fort Worth, TX, 2014.
C. Sizhe, H. Junwei, W. Hengyu and S. Kuang, "Fabrication and testing of 3500V/15A SiC JFET based power module for high-voltage, high-frequency applications," in Applied Power Electronics Conference and Exposition (APEC) 2015 IEEE, Charlotte, NC, 2015.
A. Huang, X. Song and L. Zhang, "6.5 kV Si/SiC hybrid power module: An ideal next step?," in Integrated Power Packaging (IWIPP), 2015 IEEE International Workshop on, Chicago, Il, 2015.
D. Heer, R. Bayerer and D. Domes, "SiC-JFET in half-bridge configuration - parasitic turn-on at current commutation," in PCIM Europe 2014; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of, Nuremberg, Germany, 2014.
P. Hazdra, S. Popelka, V. Zahlava and J. Vobecky, "Radiation damage in 4H-SiC and its effect on power electronic characteristics," Solid State Phenomena, vol. 242, pp. 421-426, 2016.
E. Velander, A. Lofgren, K. Kretschmar and H.-P. Nee, "Novel solutions for suppressing parasitic turn-on behaviour on lateral vertical JFETs," in Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on, 2014.
X. Ni, R. Gao, X. Song, A. Huang and W. Yu, "Development of 6kV SiC hybrid power switch based on 1200V SiC JFET and MOSFET," in Energy Conversion Congress and Exposition (ECCE), 2015 IEEE, 2015.
K. Okamura, K. Ise, M. Wake, Y. Osawa, K. Takaki and K. Takayama, "Characterization of SiC JFET in novel packaging for 1 MHz Operation," Materials Science Forum, Vols. 717-720, pp. 1029-1032, May 2012.
T. Singh and E. Kohn, "Harsh environment materials," in Reference module in materials science and material engineering, 2016.
S. Hazra, A. De, L. Cheng, J. Palmour, M. Schupbach, B. Hull, S. Allen and S. Bhattacharya, "High switching performance of 1700V, 50A SiC power MOSFET over Si IGBT/BiMOSFET for advanced power conversion applications," Power Electronics, IEEE Transactions on, vol. PP, no. 99, p. 1, 2015.
K. Chen, Z. Zhao, L. Yuan, T. Lu and F. He, "The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET," Electron Devices, IEEE Transactions on, vol. 62, no. 2, pp. 333-338, February 2015.
J. Fabre, P. Ladoux and M. Piton, "Characterization and Implementation of Dual-SiC MOSFET Modules for Future Use in Traction Converters," Power Electronics, IEEE Transactions on, vol. 30, no. 8, pp. 4079-4090, August 2015.
K. Koiwa and J.-I. Itoh, "A Maximum Power Density Design Method for Nine Switches Matrix Converter Using SiC-MOSFET," Power Electronics, IEEE Transactions on, vol. 30, no. 2, pp. 1189-1202, February 2016.
X. Yang, B. Lee and V. Misra, "Investigation of Lanthanum Silicate conditions on 4H-SiC MOSFET characteristics," Electron Devices, IEEE Transactions on, vol. 62, no. 11, pp. 3781-3785, November 2015.
DOI: http://dx.doi.org/10.11601/ijates.v5i3.168