Resumen
The split gate resurf stepped oxide with highly doped epitaxial layer (HDSGRSO) UMOSFET has extremely low on-state resistance, therefore, it can be used in synchronous rectification circuits to replace rectifier diodes to reduce rectification losses. It can greatly improve the efficiency of the DC/DC converter and there is no deadtime voltage caused by the Schottky barrier voltage. On the other hand, it can be applied to the high frequency switching due to its excellent dynamic characteristics.