ARTÍCULO
TITULO

INVESTIGATION OF THE ION SCATTERING PROCESS FROM THE A3B5 SEMICONDUCTORS BY THE COMPUTER SIMULATION METHOD

Uchkun Kutliev    
Muxtor Karimov    
Bibirobiya Sadullaeva    
Mexroj Otaboev    

Resumen

Scattering of Ar+ ions from InP(001) at the grazing incidence was studied by the binary collision approximation method. The energy and angular distributions was obtained. At the energy distribution observed few peaks corresponding to the ions scattered from atomic chains and semichannels. Received results are interested at the study of semiconductor surfaces.