4   Artículos

 
en línea
Shubin Zhang, Peifang Dai, Ning Li and Yanbo Chen    
Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows promisi... ver más
Revista: Applied Sciences    Formato: Electrónico

 
en línea
Marcello Barbirotta, Abdallah Cheikh, Antonio Mastrandrea, Francesco Menichelli, Marco Ottavi and Mauro Olivieri    
Functional safety is a key requirement in several application domains in which microprocessors are an essential part. A number of redundancy techniques have been developed with the common purpose of protecting circuits against single event upset (SEU) fa... ver más
Revista: Journal of Low Power Electronics and Applications    Formato: Electrónico

« Anterior     Página: 1 de 1     Siguiente »