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Shubin Zhang, Peifang Dai, Ning Li and Yanbo Chen
Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows promisi...
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Pawel Lisowski and Michal A. Glinicki
The wide use of multi-component cement of highly reduced Portland clinker factor is largely impeded by detrimental changes in the rheological properties of concrete mixes, a substantial reduction in the early rate of cement hardening, and sometimes the i...
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Ygor Q. Aguiar, Frédéric Wrobel, Jean-Luc Autran, Paul Leroux, Frédéric Saigné, Vincent Pouget and Antoine D. Touboul
Due to the intrinsic masking effects of combinational circuits in digital designs, Single-Event Transient (SET) effects were considered irrelevant compared to the data rupture caused by Single-Event Upset (SEU) effects. However, the importance of conside...
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