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Evgeniya Ermakova, Sergey Sysoev, Irina Tsyrendorzhieva, Alexander Mareev, Olga Maslova, Vladimir Shayapov, Eugene Maksimovskiy, Irina Yushina and Marina Kosinova
We report an investigation into 1,4-Bis-N,N-(trimethylsilyl)piperazine (BTMSP) as a novel precursor for the synthesis of silicon carbonitride films by chemical vapor deposition (CVD). The thermal stability, temperature dependence of vapor pressure and th...
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Mariuca Gartner, Mihai Anastasescu, Hermine Stroescu, Jose Maria Calderon-Moreno, Silviu Preda, Octavian-Gabriel Simionescu, Andrei Avram and Octavian Buiu
Nanocrystalline graphite (NCG) layers represent a good alternative to graphene for the development of various applications, using large area, complementary metal-oxide semiconductor (CMOS) compatible technologies. A comprehensive analysis of the physical...
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Lubo? Podlucký, Andrej Vincze, Sona Kovácová, Juraj Chlpík, Jaroslav Kovác and Franti?ek Uherek
In this paper, the analysis of silicon oxynitride (SiON) films, deposited utilizing the plasma enhanced chemical vapor deposition (PECVD) process, for optical waveguides on silicon wafers is presented. The impact of N2O flow rate on various SiON film pro...
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Yongqiang Pan, Huan Liu, Zhuoman Wang, Jinmei Jia and Jijie Zhao
SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and...
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Mauro Menichelli, Marco Bizzarri, Maurizio Boscardin, Mirco Caprai, Anna Paola Caricato, Giuseppe Antonio Pablo Cirrone, Michele Crivellari, Ilaria Cupparo, Giacomo Cuttone, Silvain Dunand, Livio Fanò, Omar Hammad Alì, Maria Ionica, Keida Kanxheri, Matthew Large, Giuseppe Maruccio, Anna Grazia Monteduro, Francesco Moscatelli, Arianna Morozzi, Andrea Papi, Daniele Passeri, Marco Petasecca, Silvia Rizzato, Alessandro Rossi, Andrea Scorzoni, Leonello Servoli, Cinzia Talamonti, Giovanni Verzellesi and Nicolas WyrschaddShow full author listremoveHide full author list
Hydrogenated amorphous silicon (a-Si:H) can be produced by plasma-enhanced chemical vapor deposition (PECVD) of SiH4 (silane) mixed with hydrogen. The resulting material shows outstanding radiation hardness properties and can be deposited on a wide varie...
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Hieronim Szymanowski, Katarzyna Olesko, Jacek Kowalski, Mateusz Fijalkowski, Maciej Gazicki-Lipman and Anna Sobczyk-Guzenda
In this work, optical coatings with a gradient of the refractive index are described. Its aim was to deposit, using the RF PECVD method, films of variable composition (ranging from silicon carbon-oxide to silicon carbon-nitride) for a smooth change of th...
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Imane Bouabibsa, Salim Lamri and Frederic Sanchette
Metal containing hydrogenated diamond-like carbon coatings (Me-DLC, Me = Al, Ti, or Nb) of 3 ± 0.2 μm thickness were deposited by a magnetron sputtering-RFPECVD hybrid process in an Ar/H2/C2H2 mixture. The composition and structure were investi...
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Yu-Lin Hsieh, Li-Han Kau, Hung-Jui Huang, Chien-Chieh Lee, Yiin-Kuen Fuh and Tomi T. Li
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Maheshwar Shrestha, Keliang Wang, Bocong Zheng, Laura Mokrzycki and Qi Hua Fan
Low-temperature growth of microcrystalline silicon (mc-Si) is attractive for many optoelectronic device applications. This paper reports a detailed comparison of optical properties, microstructure, and morphology of amorphous silicon (a-Si) thin films cr...
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Marquis Crose, Anh Tran and Panagiotis D. Christofides
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