|
|
|
|
|
Venkatachalam Jayaraman, Shanmugam Mahalingam, Shanmugavel Chinnathambi, Ganesh N. Pandian, Aruna Prakasarao, Singaravelu Ganesan, Jayavel Ramasamy, Sivasankaran Ayyaru and Young-Ho Ahn
The HfO2 nanoparticles and the nanocomposites of HfO2-graphene (10, 30, and 50 wt%) were prepared via precipitation and simple mixing method. The XRD pattern confirmed the presence of monoclinic HfO2 and hexagonal graphene in the nanocomposite. Raman spe...
ver más
|
|
|
|
|
|
|
|
|
|
|
Yuwei Cai, Qingzhu Zhang, Zhaohao Zhang, Gaobo Xu, Zhenhua Wu, Jie Gu, Junjie Li, Jinjuan Xiang and Huaxiang Yin
HfO2-based ferroelectric materials have been widely studied for their application in ferroelectric FETs, which are compatible with conventional CMOS processes; however, problems with the material?s inherent fatigue properties have limited its potential f...
ver más
|
|
|
|
|
|
|
|
|
|
|
Junhyeok Choi and Sungjun Kim
In this work, we present the nonlinear current?voltage (I?V) characteristics of a complementary resistive switching (CRS)-like curve from a HfAlOx-based memristor, used to implement a high-density cross-point array. A Pt/HfAlOx/TiN device has lower on-cu...
ver más
|
|
|
|
|
|
|
|
|
|
|
He Guan and Shaoxi Wang
Au-Pt-Ti/high-k/n-InAlAs metal-oxide-semiconductor (MOS) capacitors with HfO2-Al2O3 laminated dielectric were fabricated. We found that a Schottky emission leakage mechanism dominates the low bias conditions and Fowler?Nordheim tunneling became the main ...
ver más
|
|
|
|
|
|
|
|
|
|
|
Li-Chun Chang, Bo-Wei Liu and Yung-I Chen
Monolithic Hf–Si–N coatings and multilayered Hf–Si–N coatings with cyclical gradient concentration were fabricated using reactive direct current magnetron cosputtering. The structure of the Hf–Si–N coatings varied from...
ver más
|
|
|
|
|
|
|
|
|
|
|
Michal Mazur, Danuta Kaczmarek, Jaroslaw Domaradzki, Damian Wojcieszak and Agata Poniedzialek
-
|
|
|
|
|
|