30   Artículos

 
en línea
Dillon O?Reilly, Georg Herdrich, Felix Schäfer, Christoph Montag, Simon P. Worden, Peter Meaney and Darren F. Kavanagh    
Pulsed plasma thrusters (PPT) have demonstrated enormous potential since the 1960s. One major shortcoming is their low thrust efficiency, typically <30%. Most of these losses are due to joule heating, while some can be attributed to poor efficiency of th... ver más
Revista: Aerospace    Formato: Electrónico

 
en línea
Jaime Ramírez-Angulo, Anindita Paul, Manaswini Gangineni, Jose Maria Hinojo-Montero and Jesús Huerta-Chua    
The application of the flipped voltage follower to implement two high-performance circuits is presented: (1) The first is a class AB cascode flipped voltage follower that shows an improved slew rate and an improved bandwidth by very large factors and tha... ver más
Revista: Journal of Low Power Electronics and Applications    Formato: Electrónico

 
en línea
Chiara Elfi Spano, Fabrizio Mo, Roberta Antonina Claudino, Yuri Ardesi, Massimo Ruo Roch, Gianluca Piccinini and Marco Vacca    
Tunnel Field-Effect Transistors (TFETs) have been considered one of the most promising technologies to complement or replace CMOS for ultra-low-power applications, thanks to their subthreshold slope below the well-known limit of 60 mV/dec at room tempera... ver más
Revista: Journal of Low Power Electronics and Applications    Formato: Electrónico

 
en línea
Yuwen Huang, Xiaoping Xie, Zeyulin Zhang, Peng Dong, Zhe Li, Dazheng Chen, Weidong Zhu, Shenglei Zhao, Qian Feng, Jincheng Zhang, Chunfu Zhang and Yue Hao    
The vertical heterojunction Ga2O3 MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the p-type oxide as the current-blocking layer (CBL) is investigated for the first time using SILVACO simulation software. The results show that the thresho... ver más
Revista: Applied Sciences    Formato: Electrónico

 
en línea
Kestutis Ikamas, Dmytro B. But and Alvydas Lisauskas    
Over the last two decades, photomixer-based continuous wave systems developed into versatile and practical tools for terahertz (THz) spectroscopy. The high responsivity to the THz field amplitude of photomixer-based systems is predetermined by the homody... ver más
Revista: Applied Sciences    Formato: Electrónico

 
en línea
Chien-Hsuan Chang and Yi-Fan Chen    
To improve the efficiency of photovoltaic (PV) grid-tied systems and simplify the circuit structure, many pseudo DC-link inverters have been proposed by combining a sinusoidal pulse-width modulation (SPWM) controlled buck-boost converter and a low-freque... ver más
Revista: Applied Sciences    Formato: Electrónico

 
en línea
Kitae Lee, Sihyun Kim, Daewoong Kwon and Byung-Gook Park    
Ternary complementary metal-oxide-semiconductor technology has been spotlighted as a promising system to replace conventional binary complementary metal-oxide-semiconductor (CMOS) with supply voltage (VDD) and power scaling limitations. Recently, wafer-l... ver más
Revista: Applied Sciences    Formato: Electrónico

 
en línea
Seung-Hyun Lee, Jeong-Uk Park, Garam Kim, Dong-Woo Jee, Jang Hyun Kim and Sangwan Kim    
In this paper, analysis and optimization of surrounding channel nanowire (SCNW) tunnel field-effect transistor (TFET) has been discussed with the help of technology computer-aided design (TCAD) simulation. The SCNW TFET features an ultra-thin tunnel laye... ver más
Revista: Applied Sciences    Formato: Electrónico

 
en línea
Garam Kim, Jang Hyun Kim, Jaemin Kim and Sangwan Kim    
This work can be applied to analyze and reduce the WFV effect of TFETs.
Revista: Applied Sciences    Formato: Electrónico

 
en línea
Atabek E. Atamuratov, Mahkam M. Khalilloev, Ahmed Yusupov, A. J. García-Loureiro, Jean Chamberlain Chedjou and Kyamakya Kyandoghere    
In this paper, different physical models of single trap defects are considered, which are localized in the oxide layer or at the oxide?semiconductor interface of field effect transistors. The influence of these defects with different sizes and shapes on ... ver más
Revista: Applied Sciences    Formato: Electrónico

« Anterior     Página: 1 de 2     Siguiente »