|
|
|
|
|
Shubin Zhang, Peifang Dai, Ning Li and Yanbo Chen
Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows promisi...
ver más
|
|
|
|
|
|
|
|
|
|
|
Dipayan Mazumder, Mithun Datta, Alexander C. Bodoh and Ashiq A. Sakib
The increasing demand for high-speed, energy-efficient, and miniaturized electronics has led to significant challenges and compromises in the domain of conventional clock-based digital designs, most notably reduced circuit reliability, particularly in mi...
ver más
|
|
|
|
|
|
|
|
|
|
|
Gongzhe Qiao, Yi Zhuang, Tong Ye and Yuan Qiao
In the space environment, cosmic rays and high-energy particles may cause a single-event upset (SEU) during program execution, and further cause silent data corruption (SDC) errors in program outputs. After extensive research on SEU and SDC errors, it ha...
ver más
|
|
|
|
|
|
|
|
|
|
|
Marcello Barbirotta, Abdallah Cheikh, Antonio Mastrandrea, Francesco Menichelli, Marco Ottavi and Mauro Olivieri
Functional safety is a key requirement in several application domains in which microprocessors are an essential part. A number of redundancy techniques have been developed with the common purpose of protecting circuits against single event upset (SEU) fa...
ver más
|
|
|
|
|
|
|
|
|
|
|
Ygor Q. Aguiar, Frédéric Wrobel, Jean-Luc Autran, Paul Leroux, Frédéric Saigné, Vincent Pouget and Antoine D. Touboul
Due to the intrinsic masking effects of combinational circuits in digital designs, Single-Event Transient (SET) effects were considered irrelevant compared to the data rupture caused by Single-Event Upset (SEU) effects. However, the importance of conside...
ver más
|
|
|
|
|
|