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Lei Yang, Xinze Chen, Yuanqi Zhang, Baoxiang Feng, Haibing Wen, Ting Yang, Xin Zhao, Jingjing Huang, Darui Zhu, Yaopeng Zhao, Aimin Zhang and Xiangqian Tong
Underwater wireless power transfer (UWPT) systems are appropriate for battery charging of compact, submerged devices without a complicated and expensive sealing structure or human contact because the power source and load are not physically connected. Fo...
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Krzysztof Górecki and Pawel Górecki
The presented results can be applied in computer analyses of switched networks and in the proper estimation of the junction temperature of transistors in such networks.
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Jee-Hun Jeong, Ogyun Seok and Ho-Jun Lee
A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors (TMOSFETs) with a grounded bottom protection p-well (BPW) was proposed. The optimal BPW doping concentr...
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Mahesh B. Manandhar and Mohammad A. Matin
The use of Aluminum Gallium Nitride (AlGaN) as a power switching device material has been a promising topic of research in recent years. Along with Silicon Carbide (SiC) and Gallium Nitride (GaN), AlGaN is categorized as a Wideband Gap (WBG) material wit...
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This paper presents a comprehensive investigation on the self-sustained oscillation of silicon carbide (SiC) MOSFETs. At first, based on the double pulse switching test, it is identified that the self-sustained oscillation of SiC MOSFETs can be triggered...
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Kenneth F. Galloway, Arthur F. Witulski, Ronald D. Schrimpf, Andrew L. Sternberg, Dennis R. Ball, Arto Javanainen, Robert A. Reed, Brian D. Sierawski and Jean-Marie Lauenstein
Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than...
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