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Prashanth Barla, Hemalatha Shivarama, Ganesan Deepa and Ujjwal Ujjwal
Hybrid magnetic tunnel junction/complementary metal oxide semiconductor (MTJ/CMOS) circuits based on in-memory-computation (IMC) architecture is considered as the next-generation candidate for the digital integrated circuits. However, the energy consumpt...
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Ye Chi, Haikun Liu, Ganwei Peng, Xiaofei Liao and Hai Jin
Non-volatile memories (NVMs) have aroused vast interest in hybrid memory systems due to their promising features of byte-addressability, high storage density, low cost per byte, and near-zero standby energy consumption. However, since NVMs have limited w...
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Catalin Palade, Adrian Slav, Ionel Stavarache, Valentin Adrian Maraloiu, Catalin Negrila and Magdalena Lidia Ciurea
The high-k-based MOS-like capacitors are a promising approach for the domain of non-volatile memory devices, which currently is limited by SiO2 technology and cannot face the rapid downsizing of the electronic device trend. In this paper, we prepare MOS-...
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Daniel Reiser, Peter Reichel, Stefan Pechmann, Maen Mallah, Maximilian Oppelt, Amelie Hagelauer, Marco Breiling, Dietmar Fey and Marc Reichenbach
In embedded applications that use neural networks (NNs) for classification tasks, it is important to not only minimize the power consumption of the NN calculation, but of the whole system. Optimization approaches for individual parts exist, such as quant...
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Atousa Jafari, Christopher Münch and Mehdi Tahoori
Computing data-intensive applications on the von Neumann architecture lead to significant performance and energy overheads. The concept of computation in memory (CiM) addresses the bottleneck of von Neumann machines by reducing the data movement in the c...
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Peng Tang, Junlong Chen, Tian Qiu, Honglong Ning, Xiao Fu, Muyun Li, Zuohui Xu, Dongxiang Luo, Rihui Yao and Junbiao Peng
Flexible electronic devices have received great attention in the fields of foldable electronic devices, wearable electronic devices, displays, actuators, synaptic bionics and so on. Among them, high-performance flexible memory for information storage and...
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Mohammad Nasim Imtiaz Khan and Swaroop Ghosh
Several promising non-volatile memories (NVMs) such as magnetic RAM (MRAM), spin-transfer torque RAM (STTRAM), ferroelectric RAM (FeRAM), resistive RAM (RRAM), and phase-change memory (PCM) are being investigated to keep the static leakage within a toler...
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John Reuben
Computational methods in memory array are being researched in many emerging memory technologies to conquer the ?von Neumann bottleneck?. Resistive RAM (ReRAM) is a non-volatile memory, which supports Boolean logic operation, and adders can be implemented...
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Tommaso Zanotti, Francesco Maria Puglisi and Paolo Pavan
Different in-memory computing paradigms enabled by emerging non-volatile memory technologies are promising solutions for the development of ultra-low-power hardware for edge computing. Among these, SIMPLY, a smart logic-in-memory architecture, provides h...
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Mohammad Nasim Imtiaz Khan, Shivam Bhasin, Bo Liu, Alex Yuan, Anupam Chattopadhyay and Swaroop Ghosh
Emerging Non-Volatile Memories (NVMs) such as Magnetic RAM (MRAM), Spin-Transfer Torque RAM (STTRAM), Phase Change Memory (PCM) and Resistive RAM (RRAM) are very promising due to their low (static) power operation, high scalability and high performance. ...
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